Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


IXYS IXGT20N140C3H1

IGBT 1400V 42A 250W TO268

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IXYS IXGQ50N60C4D1

IGBT 600V 90A 300W TO3P

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IXYS IXGQ50N60B4D1

IGBT 600V 100A 300W TO3P

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IXYS IXGP50N60C4

IGBT 600V 90A 300W TO220

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IXYS IXGP30N60B4D1

IGBT 600V 56A 190W TO220

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IXYS IXGP24N60C4D1

IGBT 600V 56A 190W TO220

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IXYS IXGP24N60C4

IGBT 600V 56A 190W TO220

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IXYS IXGH50N60C4

IGBT 600V 90A 300W TO247

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