Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Renesas Electronics America RJP60F5DPM-00#T1

IGBT 600V 80A 45W TO-3PFM

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Renesas Electronics America RJH60D2DPE-00#J3

IGBT 600V 25A 63W LDPAK

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Renesas Electronics America RJH60A83RDPP-M0#T2

IGBT 600V 20A 30W TO-220FL

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Renesas Electronics America RJH60F4DPK-00#T0

IGBT 600V 60A 235.8W TO-3P

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Renesas Electronics America RJH60F3DPK-00#T0

IGBT 600V 40A 178.5W TO-3P

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Infineon Technologies IRGP4263PBF

IGBT 650V 90A 300W TO-247

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Infineon Technologies IRGP4063D1PBF

IGBT 600V 100A 330W TO247AC

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Infineon Technologies IRGP4062-EPBF

IGBT 600V 48A 250W TO-247AD

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