Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Infineon Technologies AUIRGR4045D
IGBT 600V 12A 77W DPAK
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Infineon Technologies AUIRGPS4067D1
IGBT 600V 240A 750W TO-274
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Infineon Technologies AUIRGR4045DTRL
IGBT 600V 12A 77W DPAK
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ON Semiconductor NGTB20N120IHLWG
IGBT 1200V 40A 192W TO247-3
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ON Semiconductor NGTB15N120IHLWG
IGBT 1200V 30A 156W TO247-3
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ON Semiconductor FGD3440G2
IGBT 400V 26.9A 166W DPAK
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ON Semiconductor FGD3040G2
IGBT 400V 41A 150W DPAK
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Infineon Technologies IRGPS4067DPBF
IGBT 600V 240A 750W SUPER-247
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