Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGP4263-EPBF

IGBT 650V 90A 300W TO-247

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Infineon Technologies IRGS4045DPBF

IGBT 600V 12A 77W D2PAK

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Infineon Technologies IRGR4045DPBF

IGBT 600V 12A 77W DPAK

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IXYS IXGH10N300

IGBT 3000V 18A 100W TO247AD

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IXYS IXGV25N250S

IGBT 2500V 60A 250W PLUS220SMD

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Infineon Technologies IKD04N60RF

IGBT 600V 8A 75W TO252-3

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GeneSiC Semiconductor GA35XCP12-247

IGBT 1200V SOT247

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IXYS IXGX28N140B3H1

IGBT 1400V 60A 300W PLUS247

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