Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
IXYS IXGH30N60B4
IGBT 600V 66A 190W TO247
0
IXYS IXGH28N140B3H1
IGBT 1400V 60A 300W TO247
0
IXYS IXGH24N60C4D1
IGBT 600V 56A 190W TO247
0
IXYS IXGH24N60C4
IGBT 600V 56A 190W TO247
0
ON Semiconductor NGTB20N120LWG
IGBT 1200V 40A 192W TO247-3
0
ON Semiconductor NGTB15N60EG
IGBT 600V 30A 117W TO220-3
0
ON Semiconductor NGTB15N120LWG
IGBT 1200V 30A 156W TO247-3
0
ON Semiconductor NGD8205NT4G
IGBT 390V 20A 125W DPAK
0