Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Renesas Electronics America RJH60A85RDPE-00#J3

IGBT 600V 30A 113W LDPAK

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Renesas Electronics America RJH60V1BDPP-M0#T2

IGBT 600V 16A 30W TO-220FL

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Renesas Electronics America RJH60M3DPE-00#J3

IGBT 600V 35A 113W LDPAK

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Renesas Electronics America RJH60M2DPE-00#J3

IGBT 600V 25A 63W LDPAK

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Renesas Electronics America RJP60F0DPM-00#T1

IGBT 600V 50A 40W TO-3PFM

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Renesas Electronics America RJP60F0DPE-00#J3

IGBT 600V 50A 122W LDPAK

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Renesas Electronics America RJH1CV5DPK-00#T0

IGBT 1200V 50A 245W TO-3P

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Renesas Electronics America RJP60D0DPM-00#T1

IGBT 600V 45A 40W TO-3PFM

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