Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Renesas Electronics America RJH60F6DPK-00#T0

IGBT 600V 85A 297.6W TO-3P

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Renesas Electronics America RJH60F5DPK-00#T0

IGBT 600V 80A 260.4W TO-3P

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Renesas Electronics America RJH60D6DPM-00#T1

IGBT 600V 80A 50W TO-3PFM

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Renesas Electronics America RJH60F5BDPQ-A0#T0

IGBT 600V 80A 260.4W TO-247A

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Renesas Electronics America RJH60F0DPQ-A0#T0

IGBT 600V 50A 201.6W TO-247A

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Renesas Electronics America RJH60M3DPP-M0#T2

IGBT 600V 35A 39.7W TO-220FL

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Renesas Electronics America RJH60M2DPP-M0#T2

IGBT 600V 25A 33.8W TO-220FL

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Renesas Electronics America RJH60V1BDPE-00#J3

IGBT 600V 16A 52W LDPAK

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