Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG7PH37K10DPBF

IGBT 1200V 45A 216W TO247AC

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Infineon Technologies IRG7PH37K10D-EPBF

IGBT 1200V 45A 216W TO247AD

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Infineon Technologies IRG7PH35UD1MPBF

IGBT 1200V 50A 179W TO247AD

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IXYS IXXK160N65C4

IGBT 650V 290A 940W TO264

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ON Semiconductor FGA25S125P

IGBT 1250V 50A 250W TO-3PN

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ON Semiconductor FGA20S125P

IGBT 1250V 40A 250W TO-3PN

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Renesas Electronics America RJH60F7BDPQ-A0#T0

IGBT 600V 90A 328.9W TO-247A

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Renesas Electronics America RJH60F7ADPK-00#T0

IGBT 600V 90A 328.9W TO-3P

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