Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGP4062D-EPBF

IGBT 600V 48A 250W TO247AD

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Infineon Technologies IRGS4064DTRRPBF

IGBT 600V 20A 101W D2PAK

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Infineon Technologies IRGS4064DTRLPBF

IGBT 600V 20A 101W D2PAK

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Infineon Technologies IRGR4045DTRRPBF

IGBT 600V 12A 77W DPAK

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Infineon Technologies IRG7PSH54K10DPBF

IGBT 1200V 120A 520W TO274AA

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Infineon Technologies IRG7PH50K10D-EPBF

IGBT 1200V 90A 400W TO247AD

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Infineon Technologies IRG7PH44K10DPBF

IGBT 1200V 70A 320W TO247AC

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Infineon Technologies IRG7PH44K10D-EPBF

IGBT 1200V 70A 320W TO247AD

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