Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT35GN120L2DQ2G

IGBT 1200V 94A 379W TO264

12.39

IXYS IXYH40N120C3D1

IGBT 1200V 64A 480W TO247

11.82

IXYS IXYH16N170CV1

IGBT 1.7KV 40A TO247

11.57

Infineon Technologies IKZ75N65EL5XKSA1

IGBT 650V 100A TO247-4

9.64

Microsemi Corporation APT25GT120BRDQ2G

IGBT 1200V 54A 347W TO247

9.43

Microsemi Corporation APT25GN120SG

IGBT 1200V 67A 272W D3PAK

9.05

IXYS IXGH50N90B2D1

IGBT 900V 75A 400W TO247AD

8.6

IXYS IXGH32N120A3

IGBT 1200V 75A 300W TO247

7.77