Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor FGH30N60LSDTU

IGBT 600V 60A 480W TO247

4.93

Infineon Technologies IRG4BC40W-LPBF

IGBT 600V 40A 160W TO262

4.23

Alpha & Omega Semiconductor Inc. AOK20B135D1

IGBT 1350V 20A 340W TO-247

3.81

STMicroelectronics STGW8M120DF3

TRENCH GATE FIELD-STOP IGBT M SE

3.48

STMicroelectronics STGWT30H60DFB

IGBT 600V 60A 260W TO3PL

3.39

STMicroelectronics STGB40V60F

IGBT 600V 80A 283W D2PAK

0

STMicroelectronics STGWT15H60F

TRENCH GATE FIELD-STOP IGBT H SE

2.17

STMicroelectronics STGB4M65DF2

TRENCH GATE FIELD-STOP IGBT, M S

0