Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXBF20N360

IGBT 3600V 45A ISOPLUS I4PAK

48.49

IXYS IXGF25N250

IGBT 2500V 30A 114W I4-PAK

43.42

Microsemi Corporation APT100GN120B2G

IGBT 1200V 245A 960W TMAX

27.41

IXYS IXYH25N250CHV

IGBT 2500V 235A TO-247HV

24.58

Microsemi Corporation APT45GP120BG

IGBT 1200V 100A 625W TO247

20.22

Microsemi Corporation APT33GF120B2RDQ2G

IGBT 1200V 64A 357W TMAX

18.42

Microsemi Corporation APT85GR120B2

IGBT 1200V 170A 962W TO247

16.53

IXYS IXYH30N170C

1700V/108A HIGH VOLTAGE XPT IGB

12.75