Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXYN50N170CV1

IGBT 1700V 120A SOT227B

41.53

IXYS IXBX25N250

IGBT 2500V 55A 300W PLUS247

33.84

Microsemi Corporation APT80GA60LD40

IGBT 600V 143A 625W TO264

13.79

Microsemi Corporation APT25GP120BDQ1G

IGBT 1200V 69A 417W TO247

13.07

Microsemi Corporation APT50GT60BRDQ2G

IGBT 600V 110A 446W TO247

8.54

STMicroelectronics STGW80H65DFB

IGBT 650V 120A 469W TO-247

7.5

Microsemi Corporation APT25GT120BRG

IGBT 1200V 54A 347W TO247

7.47

STMicroelectronics STGW30H60DFB

IGBT 600V 60A 260W TO247

3.68