Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXXH110N65C4

IGBT 650V 234A 880W TO247AD

7.75

ON Semiconductor HGTG12N60C3D

IGBT 600V 24A 104W TO247

6.69

IXYS IXYP50N65C3

IGBT 650V 130A 600W TO220

6.2

Infineon Technologies IKW08T120FKSA1

IGBT 1200V 16A 70W TO247-3

4.3

Infineon Technologies IRG4BC40WPBF

IGBT 600V 40A 160W TO220AB

4.01

ON Semiconductor FGH40N60SFDTU

IGBT 600V 80A 290W TO247

3.64

STMicroelectronics STGW10M65DF2

TRENCH GATE FIELD-STOP IGBT M SE

1.86

STMicroelectronics STGB30V60F

TRENCH GATE FIELD-STOP IGBT, V S

0