Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT68GA60B

IGBT 600V 121A 520W TO-247

9.76

IXYS IXGH40N120C3

IGBT 1200V 75A 380W TO247

9.32

IXYS IXYH40N120C3

IGBT 1200V 70A 577W TO247

9.25

Microsemi Corporation APT25GR120S

IGBT 1200V 75A 521W D3PAK

7.95

Microsemi Corporation APT36GA60BD15

IGBT 600V 65A 290W TO-247

8.28

Microsemi Corporation APT25GN120BG

IGBT 1200V 67A 272W TO247

7.77

Infineon Technologies IRGP4062DPBF

IGBT 600V 48A 250W TO247AC

6.45

Infineon Technologies IKW40N60H3FKSA1

IGBT 600V 80A 306W TO247-3

5.5