Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

IXYS IXXK160N65B4

IGBT 650V 310A 940W TO264

14.07

Microsemi Corporation APT64GA90B2D30

IGBT 900V 117A 500W TO-247

12.95

STMicroelectronics STGWA40S120DF3

IGBT 1200V 40A TO247-3L

12.12

IXYS IXGH2N250

IGBT 2500V 5.5A 32W TO247

11.91

Microsemi Corporation APT80GA60B

IGBT 600V 143A 625W TO247

11.75

Microsemi Corporation APT40GR120B2D30

IGBT 1200V 88A 500W TO247

11.73

Microsemi Corporation APT50GR120B2

IGBT 1200V 117A 694W TO247

11.58

Microsemi Corporation APT50GN120B2G

IGBT 1200V 134A 543W TO-247

11.31