Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGH39N60B

IGBT 600V 76A 200W TO247AD

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IXYS IXGH38N60U1

IGBT 600V 76A 200W TO247AD

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IXYS IXGH38N60

IGBT 600V 76A 200W TO247AD

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IXYS IXGH35N120C

IGBT 1200V 70A 300W TO247AD

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IXYS IXGH34N60B2

IGBT 600V 70A 190W TO247AD

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IXYS IXGH32N60BD1

IGBT 600V 60A 200W TO247AD

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IXYS IXGH31N60D1

IGBT 600V 60A 150W TO247AD

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IXYS IXGH31N60

IGBT 600V 60A 150W TO247AD

0