Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGH30N60A

IGBT 600V 50A 200W TO247AD

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IXYS IXGH28N60BD1

IGBT 600V 40A 150W TO247AD

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IXYS IXGH28N60B

IGBT 600V 40A 150W TO247AD

0

IXYS IXGH25N100U1

IGBT 1000V 50A 200W TO247AD

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IXYS IXGH25N100AU1

IGBT 1000V 50A 200W TO247AD

0

IXYS IXGH25N100

IGBT 1000V 50A 200W TO247AD

0

IXYS IXGH24N60CD1

IGBT 600V 48A 150W TO247AD

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IXYS IXGH24N60BU1

IGBT 600V 48A 150W TO247AD

0