Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


IXYS IXGQ150N30TC

IGBT 300V 150A TO3P

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IXYS IXGP90N33TCM-A

IGBT 330V 40A TO-220AB

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IXYS IXGP15N120C

IGBT 1200V 30A 200W TO220AB

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IXYS IXGP12N60B

IGBT 600V 24A 100W TO220AB

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IXYS IXGP12N100AU1

IGBT 1000V 24A 100W TO220AB

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IXYS IXGP10N60A

IGBT 600V 20A 100W TO220AB

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IXYS IXGL50N60BD1

IGBT 600V ISOPLUS264

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IXYS IXGK50N60BD1

IGBT 600V 75A 300W TO264AA

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