Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGH24N170AH1

IGBT 1700V 24A 250W TO247AD

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IXYS IXGH20N60BU1

IGBT 600V 40A 150W TO247AD

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IXYS IXGH20N60BD1

IGBT 600V 40A 150W TO247AD

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IXYS IXGH20N60B

IGBT 600V 40A 150W TO247AD

0

IXYS IXGH20N60AU1

IGBT 600V 40A 150W TO247AD

0

IXYS IXGH20N60A

IGBT 600V 40A 150W TO247AD

0

IXYS IXGH20N60

IGBT 600V 40A 150W TO247AD

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IXYS IXGH15N120C

IGBT 1200V 30A 150W TO247AD

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