Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGK50N60AU1

IGBT 600V 75A 300W TO264AA

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IXYS IXGK50N60A2U1

IGBT 600V 75A 400W TO264AA

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IXYS IXGH41N60

IGBT 600V 76A 200W TO247AD

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IXYS IXGH40N60C

IGBT 600V 75A 250W TO247AD

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IXYS IXGH40N60B

IGBT 600V 75A 250W TO247AD

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IXYS IXGH40N60A

IGBT 600V 75A 250W TO247AD

0

IXYS IXGH40N60

IGBT 600V 75A 250W TO247AD

0

IXYS IXGH39N60BD1

IGBT 600V 76A 200W TO247AD

0