Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGR32N60C

IGBT 600V 45A 140W ISOPLUS247

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IXYS IXGR24N60CD1

IGBT 600V 42A 80W ISOPLUS247

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IXYS IXGR24N60C

IGBT 600V 42A 80W ISOPLUS247

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IXYS IXGR24N60B

IGBT 600V 42A 80W ISOPLUS247

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IXYS IXGR12N60C

IGBT 600V 15A 55W ISOPLUS247

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IXYS IXGQ90N33TC

IGBT 330V 90A 200W TO3P

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IXYS IXGQ30N60C2D4

IGBT 600V 30A TO3P

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IXYS IXGQ180N33TC

IGBT 330V 180A TO3P

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