Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGR50N60B

IGBT 600V 75A 250W ISOPLUS247

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IXYS IXGR50N60A2U1

IGBT 600V 75A 200W ISOPLUS247

0

IXYS IXGR40N60C2G1

IGBT 600V ISOPLUS247

0

IXYS IXGR40N60C

IGBT 600V 75A 200W ISOPLUS247

0

IXYS IXGR39N60BD1

IGBT 600V 66A 140W ISOPLUS247

0

IXYS IXGR39N60B

IGBT 600V 66A 140W ISOPLUS247

0

IXYS IXGR35N120C

IGBT 1200V 70A 200W ISOPLUS247

0

IXYS IXGR32N60CD1

IGBT 600V 45A 140W ISOPLUS247

0