Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFR 93AW E6327

RF TRANS NPN 12V 6GHZ SOT323-3

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Infineon Technologies BFR 92W E6327

RF TRANS NPN 15V 5GHZ SOT323-3

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Infineon Technologies BFR 740L3 E6327

RF TRANS NPN 4.7V 42GHZ TSLP-3

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Infineon Technologies BFR 380T E6327

RF TRANS NPN 9V 14GHZ SC75

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Infineon Technologies BFR 360T E6327

RF TRANS NPN 9V 14GHZ SC75

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Infineon Technologies BFR 360L3 E6327

RF TRANS NPN 9V 14GHZ TSLP-3-1

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Infineon Technologies BFR 340T E6327

RF TRANS NPN 9V 14GHZ SC75

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Infineon Technologies BFR 183T E6327

RF TRANS NPN 12V 8GHZ SC75

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