Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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ON Semiconductor BF959G

RF TRANS NPN 20V 700MHZ TO92-3

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ON Semiconductor BF959

RF TRANS NPN 20V 700MHZ TO92-3

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Infineon Technologies BFR750L3RHE6327XTSA1

RF TRANS NPN 4.7V 37GHZ TSLP-3

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Infineon Technologies BFR 705L3RH E6327

RF TRANS NPN 4.7V 39GHZ TSLP-3

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Infineon Technologies BFP 740F E6327

RF TRANS NPN 4.7V 42GHZ 4TSFP

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Infineon Technologies BFP740E6327HTSA1

RF TRANS NPN 4.7V 42GHZ SOT343-4

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Infineon Technologies BGB 540 E6327

RF TRANS NPN 3.5V SOT343-4

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Infineon Technologies BFS 469L6 E6327

RF TRANS 2 NPN 5V/10V 9GHZ TSLP

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