Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFG 196 E6327

RF TRANS NPN 12V 7.5GHZ SOT223-4

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Infineon Technologies BFG 193 E6433

RF TRANS NPN 12V 8GHZ SOT223-4

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Infineon Technologies BF799WE6327BTSA1

RF TRANS NPN 20V 800MHZ SOT323-3

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Infineon Technologies BF 775 E6327

RF TRANS NPN 15V 5GHZ SOT23-3

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Infineon Technologies BF 770A E6327

RF TRANS NPN 12V 6GHZ SOT23-3

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Broadcom Limited AT-30533-TR1G

RF TRANS NPN 5.5V SOT23

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Broadcom Limited AT-31033-TR1G

RF TRANS NPN 5.5V SOT23

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Broadcom Limited AT-30511-TR1G

RF TRANS NPN 5.5V SOT143

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