Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFR 182T E6327

RF TRANS NPN 12V 8GHZ SC75

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Infineon Technologies BFR 182 B6663

RF TRANS NPN 12V 8GHZ SOT23-3

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Infineon Technologies BFR 181T E6327

RF TRANS NPN 12V 8GHZ SC75

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Infineon Technologies BFR 181 E6780

RF TRANS NPN 12V 8GHZ SOT23-3

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Infineon Technologies BFP 620F E7764

RF TRANS NPN 2.8V 65GHZ 4TSFP

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Infineon Technologies BFP420E6433HTMA1

RF TRANS NPN 5V 25GHZ SOT343-4

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Infineon Technologies BFG 235 E6327

RF TRANS NPN 15V 5.5GHZ SOT223-4

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Infineon Technologies BFG 19S E6327

RF TRANS NPN 15V 5.5GHZ SOT223-4

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