Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFS 466L6 E6327

RF TRANS 2 NPN 5V/9V 14GHZ TSLP

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Infineon Technologies BFS 460L6 E6327

RF TRANS 2NPN 5.8V 22GHZ TSLP-6

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Infineon Technologies BFS 386L6 E6327

RF TRANS 2 NPN 6V 14GHZ TSLP-6-1

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Infineon Technologies BFS 380L6 E6327

RF TRANS 2 NPN 9V 14GHZ TSLP-6-1

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Infineon Technologies BFS 360L6 E6327

RF TRANS 2 NPN 9V 14GHZ TSLP-6-1

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Infineon Technologies BFS17WE6327HTSA1

RF TRANS NPN 15V 1.4GHZ SOT323-3

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Infineon Technologies BFR 949T E6327

RF TRANS NPN 10V 9GHZ SC75

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Infineon Technologies BFR 949L3 E6327

RF TRANS NPN 10V 9GHZ TSLP-3-1

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