Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation SD1013-03

RF TRANS NPN 35V 150MHZ M113

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Microsemi Corporation TAN500

RF TRANS NPN 75V 1.215GHZ 55ST

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Microsemi Corporation TCS800

RF TRANS NPN 65V 1.03GHZ 55SM

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Microsemi Corporation TPR700

RF TRANS NPN 65V 1.09GHZ 55KT

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Microsemi Corporation TAN300

RF TRANS NPN 65V 1.215GHZ 55KT

0

Microsemi Corporation UTV200

RF TRANS NPN 28V 860MHZ 55JV

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Microsemi Corporation UTV080

RF TRANS NPN 28V 860MHZ 55JV

0

Microsemi Corporation MS2201

RF TRANS NPN 45V 1.15GHZ M220

0