Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation ITC1100

RF TRANS NPN 65V 1.03GHZ 55SW

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Microsemi Corporation DME800

RF TRANS NPN 65V 1.15GHZ 55ST-1

0

Microsemi Corporation DME500

RF TRANS NPN 55V 1.15GHZ 55KT

0

Microsemi Corporation DME400A

TRANSISTOR BIPO 55AW-1

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Microsemi Corporation 2N5179

RF TRANS NPN 12V 200MHZ TO72

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Microsemi Corporation 2N5109

RF TRANS NPN 20V 1.2GHZ TO39

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Microsemi Corporation 2N5031

RF TRANS NPN 10V 400MHZ TO72

0

Microsemi Corporation 2N4427

RF TRANS NPN 40V 500MHZ TO39

0