Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

---

Microsemi Corporation SD1444

RF TRANS NPN 16V 512MHZ TO39

0

Microsemi Corporation SD1127

RF TRANS NPN 18V 175MHZ TO39

0

Microsemi Corporation SRF4427

RF TRANS NPN 18V 1.3GHZ 8SO

0

Microsemi Corporation SD1224

RF TRANS NPN 35V 175MHZ M135

0

Microsemi Corporation SD1013

RF TRANS NPN 35V 150MHZ M135

0

Microsemi Corporation SD1536-03

RF TRANS NPN 65V 1.15GHZ M115

0

Microsemi Corporation SD1526-01

RF TRANS NPN 45V 1.215GHZ M115

0

Microsemi Corporation SD1224-02

RF TRANS NPN 35V 175MHZ M113

0