Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation MS2200

RF TRANS NPN 65V 500MHZ M102

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Microsemi Corporation MS1649

RF TRANS NPN 16V 470MHZ TO39

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Microsemi Corporation MS1579

RF TRANS NPN 25V 860MHZ M156

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Microsemi Corporation MS1512

RF TRANS NPN 25V 860MHZ M122

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Microsemi Corporation MS1409

RF TRANS NPN 40V 175MHZ TO39

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Microsemi Corporation MS1406

RF TRANS NPN 35V 175MHZ M135

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Microsemi Corporation MS1402

RF TRANS NPN 16V 512MHZ M122

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Microsemi Corporation MS1337

RF TRANS NPN 18V 175MHZ M113

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