Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation MS1336

RF TRANS NPN 18V 175MHZ M135

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Microsemi Corporation MS1261

RF TRANS NPN 18V 175MHZ M122

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Microsemi Corporation MS1227

RF TRANS NPN 18V 30MHZ M113

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Microsemi Corporation MS1226

RF TRANS NPN 36V 30MHZ M113

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Microsemi Corporation 2N2857

RF TRANS NPN 15V 500MHZ TO72

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Microsemi Corporation 2A8

RF TRANS NPN 21V 2GHZ 55EU

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Microsemi Corporation 23A008

RF TRANS NPN 22V 3.7GHZ 55BT

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Microsemi Corporation 23A005

RF TRANS NPN 22V 4.3GHZ 55BT

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