Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXXH60N65B4H1

IGBT 650V 116A 380W TO247AD

8

Microsemi Corporation APT35GA90BD15

IGBT 900V 63A 290W TO247

7.77

IXYS IXGT32N120A3

IGBT 1200V 75A 300W TO268

7.95

Infineon Technologies IGW75N60TFKSA1

IGBT 600V 150A 428W TO247-3

7.03

Infineon Technologies IRG4PH30KDPBF

IGBT 1200V 20A 100W TO247AC

6.9

Infineon Technologies IGW40T120FKSA1

IGBT 1200V 75A 270W TO247-3

6.45

Infineon Technologies IRG4PH20KDPBF

IGBT 1200V 11A 60W TO247AC

6.42

IXYS IXGP30N120B3

IGBT 1200V 60A 300W TO220

6.26