Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXYH75N65C3H1

IGBT 650V 170A 750W TO247

11.91

Microsemi Corporation APT80GA90B

IGBT 900V 145A 625W TO247

11.58

IXYS IXYH24N170C

IGBT 1.7KV 58A TO247-3

10.71

IXYS IXYH20N120C3D1

IGBT 1200V 36A 230W TO-247AD

10.32

Microsemi Corporation APT35GN120BG

IGBT 1200V 94A 379W TO247

9.71

Microsemi Corporation APT40GR120B

IGBT 1200V 88A 500W TO247

8.95

IXYS IXYH16N170C

IGBT 1.7KV 40A TO247

8.82

IXYS IXYH10N170C

IGBT 1.7KV 36A TO247

8.17