Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

IXYS IXGA30N120B3

IGBT 1200V 60A 300W TO263

6.4

Infineon Technologies IGW50N60H3FKSA1

IGBT 600V 100A 333W TO247-3

5.5

IXYS IXGP20N120A3

IGBT 1200V 40A 180W TO220

4.81

IXYS IXXH30N65B4

IGBT 650V 65A 230W TO247AD

4.4

Infineon Technologies IKP30N65H5XKSA1

IGBT TRENCH 650V 55A TO220-3

3.29

Infineon Technologies IKP20N65H5XKSA1

IGBT TRENCH 650V 42A TO220-3

3.02

Infineon Technologies IRG4BC30WPBF

IGBT 600V 23A 100W TO220AB

2.98

Infineon Technologies IRG4BC30UPBF

IGBT 600V 23A 100W TO220AB

2.96