Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS MMIX1X200N60B3H1

IGBT 600V 175A 520W SMPD

36.74

IXYS IXBH20N300

IGBT 3000V 50A 250W TO247

34.25

IXYS IXBT12N300

IGBT 3000V 30A 160W TO268

26.75

Microsemi Corporation APT200GN60B2G

IGBT 600V 283A 682W TO247

23.05

Microsemi Corporation APT45GP120B2DQ2G

IGBT 1200V 113A 625W TMAX

21.33

IXYS IXXK200N65B4

IGBT 650V 370A 1150W TO264

17.97

Microsemi Corporation APT100GN60LDQ4G

IGBT 600V 229A 625W TO264

15.14

IXYS IXBT16N170A

IGBT 1700V 16A 150W TO268

13.12