Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


IXYS IXSH24N60A

IGBT 600V 48A 150W TO247

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IXYS IXSH24N60

IGBT 600V 48A 150W TO247

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IXYS IXRR40N120

IGBT 1200V 45A ISOPLUS247

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IXYS IXGX40N60BD1

IGBT 600V 75A 250W PLUS247

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IXYS IXGX35N120CD1

IGBT 1200V 70A 350W PLUS247

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IXYS IXGT39N60BD1

IGBT 600V 76A 200W TO268

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IXYS IXGT32N60C

IGBT 600V 60A 200W TO268

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IXYS IXGT32N60BD1

IGBT 600V 60A 200W TO268

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