Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Infineon Technologies BFP 520F E6327
RF TRANS NPN 3.5V 45GHZ 4TSFP
0
ON Semiconductor NSVF2250WT1G
RF TRANS NPN 15V SC70-3
0
ON Semiconductor NSVF2250WT1
RF TRANS NPN 15V SC70-3
0
ON Semiconductor MSD2714AT1G
RF TRANS NPN 25V 650MHZ SC59
0
ON Semiconductor MSC3930-BT1G
RF TRANS NPN 20V 150MHZ SC70-3
0
ON Semiconductor MSC3930-BT1
RF TRANS NPN 20V 150MHZ SC70-3
0
ON Semiconductor MSC2295-CT1G
RF TRANS NPN 20V 150MHZ SC59
0
ON Semiconductor MSC2295-CT1
RF TRANS NPN 20V 150MHZ SC59
0