Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation 1075MP

RF TRANS NPN 65V 1.15GHZ 55FW-1

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Microsemi Corporation 1015MP

RF TRANS NPN 65V 1.15GHZ 55FW

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Microsemi Corporation 1014-6A

RF TRANS NPN 50V 1.4GHZ 55LV

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Microsemi Corporation 1014-12

RF TRANS NPN 50V 1.4GHZ 55LT

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Microsemi Corporation 1004MP

RF TRANS 50V 1.215GHZ 55FW-1

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Microsemi Corporation 1002MP

RF TRANS 50V 1.215GHZ 55FW-1

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Microsemi Corporation 1000MP

RF TRANS NPN 1.15GHZ 55FW

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Microsemi Corporation 0912-25

RF TRANS NPN 55V 1.215GHZ 55CT

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