Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation MS1008

RF TRANS NPN 55V 30MHZ M164

0

Microsemi Corporation MS1004

RF TRANS NPN 55V 30MHZ M177

0

Microsemi Corporation MS1003

RF TRANS NPN 18V 175MHZ M111

0

Microsemi Corporation MS1001

RF TRANS NPN 18V 30MHZ M174

0

Microsemi Corporation MRF586

RF TRANS NPN 17V 3GHZ TO39

0

Microsemi Corporation MRF545

RF TRANS PNP 70V 1.4GHZ TO39

0

Microsemi Corporation MPA201

RF TRANS NPN 22V 2GHZ 55AU

0

Microsemi Corporation MDS800

RF TRANS NPN 65V 1.09GHZ 55ST-1

0