Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation MDS70

RF TRANS NPN 65V 1.09GHZ 55CX

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Microsemi Corporation MDS60L

RF TRANS NPN 65V 1.09GHZ 55AW

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Microsemi Corporation MDS500L

RF TRANS NPN 70V 1.09GHZ 55ST

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Microsemi Corporation MDS400

RF TRANS NPN 55V 1.09GHZ 55KT

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Microsemi Corporation 1214-220M

RF TRANS NPN 70V 1.4GHZ 55ST

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Microsemi Corporation 1214-150L

RF TRANS NPN 65V 1.4GHZ 55ST-1

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Microsemi Corporation 1214-110M

RF TRANS NPN 75V 1.4GHZ 55KT

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Microsemi Corporation 10A060

RF TRANS NPN 24V 1GHZ 55FT

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