Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation 0910-60M

RF TRANS NPN 65V 1GHZ 55AW

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Microsemi Corporation 0910-150M

RF TRANS NPN 65V 1GHZ 55KT

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Microsemi Corporation 0510-50A

RF TRANS 27V 1GHZ 55AV

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Microsemi Corporation MS2554

RF TRANS NPN 65V 1.15GHZ M218

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Microsemi Corporation MS2553C

RF TRANS NPN 25V 1.15GHZ M220

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Microsemi Corporation MS2552

RF TRANS NPN 65V 1.15GHZ 2NLFL

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Microsemi Corporation MS2473

RF TRANS NPN 65V 1.09GHZ M112

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Microsemi Corporation MS2472

RF TRANS NPN 65V 1.15GHZ M112

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