Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation UMIL100A

RF TRANS NPN 31V 400MHZ 55JU

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Microsemi Corporation UMIL25

RF TRANS NPN 33V 400MHZ 55HV

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Microsemi Corporation UMIL80

RF TRANS NPN 31V 500MHZ 55HV

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Microsemi Corporation UTV040

RF TRANS NPN 25V 860MHZ 55FT

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Microsemi Corporation UTV020

RF TRANS NPN 25V 860MHZ 55FT

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Microsemi Corporation UTV010

RF TRANS NPN 24V 860MHZ 55FT

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Microsemi Corporation UMIL3

RF TRANS NPN 30V 400MHZ 55FT

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Microsemi Corporation TAN75A

RF TRANS NPN 50V 1.215GHZ 55AZ

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