Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IHW30N120R2

IGBT 1200V 60A 390W TO247-3

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Infineon Technologies IHW20N120R2

IGBT 1200V 40A 330W TO247-3

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Infineon Technologies IHW15T120FKSA1

IGBT 1200V 30A 113W TO247-3

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Infineon Technologies IHW15N120R2

IGBT 1200V 30A 357W TO247-3

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Infineon Technologies IHP10T120

IGBT 1200V 16A 138W TO220-3

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Infineon Technologies IHD10N60RA

IGBT 600V 20A 110W TO252-3

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Infineon Technologies IHD06N60RA

IGBT 600V 12A 88W TO252-3

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Infineon Technologies IGP03N120H2XKSA1

IGBT 1200V 9.6A 62.5W TO220-3

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