Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


Infineon Technologies IKA03N120H2XKSA1

IGBT 1200V 8.2A 29W TO220-3

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Infineon Technologies IHY20N120R3XKSA1

IGBT 1200V 40A 310W TO247HC-3

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Infineon Technologies IHY15N120R3XKSA1

IGBT 1200V 30A 254W TO247HC-3

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Infineon Technologies IHW40T60FKSA1

IGBT 600V 80A 303W TO247-3

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Infineon Technologies IHW40T120FKSA1

IGBT 1200V 75A 270W TO247-3

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Infineon Technologies IHW30N90TFKSA1

IGBT 900V 60A 428W TO247-3

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Infineon Technologies IHW30N90R

IGBT 900V 60A 454W TO247-3

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Infineon Technologies IHW30N60TFKSA1

IGBT 600V 60A 187W TO247-3

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