Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IKU15N60RBKMA1

IGBT 600V 30A 250W TO251-3

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Infineon Technologies IKU10N60RBKMA1

IGBT 600V 20A 150W TO251-3

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Infineon Technologies IKU06N60RBKMA1

IGBT 600V 12A 100W TO251-3

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Infineon Technologies IKU04N60RBKMA1

IGBT 600V 8A 75W TO251-3

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Infineon Technologies IKP03N120H2XKSA1

IGBT 1200V 9.6A 62.5W TO220-3

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Infineon Technologies IKP01N120H2XKSA1

IGBT 1200V 3.2A 28W TO220-3

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Infineon Technologies IKI04N60TXKSA1

IGBT 600V 8A 42W TO262-3

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Infineon Technologies IKD15N60R

IGBT 600V 30A 250W TO252-3

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