Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGF30NC60S

IGBT 600V 22A 40W TO220FP

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STMicroelectronics STGD7NB120ST4

IGBT 1200V 10A 55W DPAK

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STMicroelectronics STGB7NC60HT4

IGBT 600V 25A 80W D2PAK

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STMicroelectronics STGB10NB37LZ

IGBT 440V 20A 125W D2PAK

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Infineon Technologies SKW30N60HSFKSA1

IGBT 600V 41A 250W TO247-3

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Infineon Technologies SKW20N60HSFKSA1

IGBT 600V 36A 178W TO247-3

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Infineon Technologies SKW20N60FKSA1

IGBT 600V 40A 179W TO247-3

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Infineon Technologies SKW15N120FKSA1

IGBT 1200V 30A 198W TO247-3

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