Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG7PH42UD1PBF

IGBT 1200V 85A 313W TO247AC

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Infineon Technologies IRG7PH30K10DPBF

IGBT 1200V 30A 180W TO247AC

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Infineon Technologies IRG6S330UPBF

IGBT 330V 70A 160W D2PAK

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Infineon Technologies IRG6IC30UPBF

IGBT 600V 25A 37W TO220ABFP

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Infineon Technologies IRG6IC30U-110P

IGBT 330V 28A 43W TO220ABFP

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STMicroelectronics STGWS38IH130D

IGBT 1300V 55A 180W TO247

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STMicroelectronics STGP10NB60SFP

IGBT 600V 23A 25W TO220

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STMicroelectronics STGFL6NC60DI

IGBT 600V 7A 22W TO220FP

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