Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies SKB02N60E3266ATMA1

IGBT 600V 6A 30W TO263-3

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Infineon Technologies SKB02N60ATMA1

IGBT 600V 6A 30W TO263-3

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Infineon Technologies SKA06N60XKSA1

IGBT 600V 9A 32W TO220-3

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Infineon Technologies SGW50N60HSFKSA1

IGBT 600V 100A 416W TO247-3

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Infineon Technologies SGW30N60HSFKSA1

IGBT 600V 41A 250W TO247-3

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Infineon Technologies SGW25N120FKSA1

IGBT 1200V 46A 313W TO247-3

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Infineon Technologies SGW20N60HSFKSA1

IGBT 600V 36A 178W TO247-3

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Infineon Technologies SGW15N60FKSA1

IGBT 600V 31A 139W TO247-3

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